Apparatus and method for self-refreshing dynamic random access memory cells

ABSTRACT

A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array.

RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.11/319,451 filed Dec. 29, 2005.

FIELD OF THE INVENTION

The present invention generally relates to a semiconductor integratedcircuit. In particular, the present invention relates to a dynamicrandom access memory device with low power self-refresh operation.

BACKGROUND OF THE INVENTION

In dynamic random access memory (DRAM) integrated circuit devices, aDRAM cell array is typically arranged in rows and columns such that aparticular DRAM cell is addressed by specifying its row and columnwithin the array. A wordline connects a row of cells to a set of bitlinesense amplifiers that detect the data in the cells. In a read operation,a subset of the data in the bitline sense amplifiers is then chosen, or“column-selected” for output. DRAM cells are “dynamic” in the sense thatthe stored data, typically in the form of charged and discharged storagecapacitors, will dissipate after a relatively short period of time.Thus, in order to retain the information, the contents of the DRAM cellsmust be refreshed. The charged or discharged state of the storagecapacitor must be reapplied to an individual memory cell in a repetitivemanner. The maximum amount of time allowable between refreshingoperations is determined by the charge storage capabilities of thestorage capacitors that make up the DRAM cell array. DRAM manufacturerstypically specify a refresh time for which data is retained in the DRAMcells.

A refresh operation is similar to a read operation, but no data isoutput. The sensing of the data in the cells by the bitline senseamplifiers is followed by a restoring operation that results in the databeing rewritten to the cells. The data is, thus, “refreshed”. Therefresh operation is performed by enabling a wordline according to a rowaddress, and enabling a bitline sense amplifier. In addition, therefresh operation may be carried out by operating the bitline senseamplifier without receiving an external refresh address. In this case, arefresh address counter, which is integrated in a DRAM device chip,generates a row address subsequent to receiving an external startaddress.

It is well known that data stored in memory cells of a DRAM is retainedtherein by refresh operations. A self-refresh operation is performedautomatically in a “standby” mode to retain the data written in thememory cells of the DRAM. In known self-refresh operations, automaticburst refresh operations can be performed at the beginning ofself-refresh and at the end of self-refresh operations for shortening arefresh regulation time and for securing a stable refresh of the memorycells. U.S. Pat. No. 5,583,818 granted to You et al. on Dec. 10, 1996discloses a semiconductor memory device having an automatic burstrefresh operation in a self-refresh operation.

A simplified description of prior art self-refresh operation is nowdiscussed with reference to FIG. 1 that shows a self-refresh operationwith automatic burst refresh function found in conventional DRAMdevices. Referring to FIG. 1, in response to a command signal 111, aself-refresh mode detector 113 provides a self-refresh starting signal115 at an entry into the self-refresh mode. A burst refresh modecontroller 117 provides a burst refresh control signal 119 during a“burst self-refresh” period, in response to the self-refresh startingsignal 115 and a clock signal 121 fed from a clock generator 123. Aself-refresh mode controller 125 provides a self-refresh control signal127, in response to the burst refresh control signal 119 and theself-refresh starting signal 115. The clock generator 123 provides theclock signal 121 and a self-refresh row signal 129, in response to theself-refresh control signal 127 and the burst refresh control signal119. At an exit from the self-refresh mode, in response to the commandsignal 111, the self-refresh mode detector 113 ceases the self-refreshstarting signal 115. Therefore, the self-refresh mode controller 125ceases the generation of the self-refresh control signal 127. A periodduring the self-refresh control signal 127 being generated is a“self-refresh” period. Also, the burst refresh mode controller 117provides the burst refresh control signal 119 during another “burstself-refresh” period. In response to the burst self-refresh controlsignal 119 and the self-refresh control signal 127, the clock generator123 provides the self-refresh row signal 129 during the burst refreshperiod, the self-refresh period and the other burst self-refresh period.The self-refresh row signal 129 is provided to an internal row addresscounter which in turn provides a refresh row address signal to a rowaddress decoder to refresh cells of the wordlines of sequentiallyselected rows.

The prior art DRAM device shown in FIG. 1 performs the self-refreshoperation based on a one-cell-per-bit manner and the refresh of the DRAMcells has to be performed at a relatively high frequency. Therefore, theone-cell-per-bit self-refresh may still consume power during theself-refresh operation period. It is, thus, desirable to reduce powerconsumption in the self-refresh operation mode in the DRAM device.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an improved dynamicrandom access memory (DRAM) device having a cell array with aself-refresh function and an improved method for self-refreshing theDRAM cells with the array to reduce power consumption.

In accordance with one aspect of the present invention, there isprovided a dynamic random access memory (DRAM) device including an arrayof DRAM cells of rows by columns. Each DRAM cell of the array is coupledwith a wordline of a corresponding row and a bitline of a correspondingcolumn. The DRAM device also includes a refresh circuit. With therefresh circuit, in a self-refresh mode, main data stored in the DRAMcells coupled with wordlines of a first set of every other rows isretained and assistant data is overwritten into the DRAM cells coupledwith wordlines of a second set of every other rows. The assistant datais opposite data to the main data. Each row of the second set isadjacent to each row of the first set.

For example, the first and second sets of every other rows are the evenand odd numbered rows, respectively. Thus, in the self-refresh mode, theDRAM cells coupled with the wordlines of the even numbered rows retainthe main data therein and the assistant data is overwritten into theDRAM cells coupled with the wordlines of the odd numbered rows.

Advantageously, the refresh circuit includes a mode entry detectioncircuit that detects an entry into the self-refresh mode to retain themain data and to overwrite the assistant data. By the refresh circuit, afirst self-refresh mode signal is produced. Also, the refresh circuitincludes a dummy establishing circuit that detects a starting refreshaddress for operation of the self-refresh mode in response to the firstself-refresh mode signal and that will establish a dummy refresh cycleif the detected starting refresh address mismatches with a predeterminedaddress for operation of the self-refresh mode. The established dummyrefresh cycle will be adopted for self-refreshing the DRAM cells.

Preferably, the refresh circuit further includes an entry signalproducing circuit that produces a self-refresh entry signal in responseto the first self-refresh mode signal. An adoption circuit adopts thedummy refresh cycle in the self-refresh mode. The adoption circuit mayinclude a burst circuit that determines a first burst refresh cycle inresponse to the self-refresh entry signal.

Advantageously, in response to the self-refresh entry signal, therefresh circuit detects a starting refresh address for the self-refreshoperation mode, from a refresh signal representing a refresh rowaddress. In response to the self-refresh entry signal, a burst circuitdetermines a first burst refresh cycle. The dummy refresh cycle and thefirst burst refresh cycle are combined by the adoption circuit toestablish an entry-burst refresh period.

If, for example, the DRAM cells coupled with the even numbered wordlineshave to be refreshed, the automatic burst refresh cycle shall start witheven numbered refresh address to perform the self-refreshing. In thatcase, the DRAM cells coupled with the odd numbered wordlines performassistant roles. The refresh circuit detects the refresh row addresscorresponding to the even numbered wordline (i.e., a correct address),for example, based on the least significant bit (LSB) of the refresh rowaddress. If the detected address does not match with the correspondingrow address, that is a wrong address, a dummy refresh producer producesa dummy refresh pulse. Also, in response to the self-refresh mode entry,burst clock pulses and self-refresh oscillation pulses are produced.These pulses are combined by the cycle combining circuit to determine adummy refresh cycle, a first burst refresh cycle and a self-refreshoscillation cycle as an entry-burst refresh period and a self-refreshperiod.

Preferably, the burst circuit includes a burst clock generator forgenerating pulses as the burst clock pulses and also includes a pulsecounter for counting the burst clock pulses until a predetermined value(N). For example, the predetermined value relates to the number (N) ofthe wordlines associated with the array. Upon N count, a secondself-refresh mode signal is produced by the pulse counter. Thegeneration of the second self-refresh mode signal results in the end ofthe first burst refresh cycle. In response to the second self-refreshmode signal, an oscillation circuit generates the pulses of theself-refresh oscillation pulses to start the self-refresh oscillationcycle.

For example, at the exit from the self-refresh mode, the self-refreshcontrol circuit produces a self-refresh exit signal. The firstself-refresh mode signal is disabled. In response to the self-refreshexit signal, the generation of the self-refresh oscillation pulses isceased and again, the burst refresh clock signal having pulses of thepredetermined number N is generated. With the first self-refresh modesignal being disabled, the self-refresh oscillation cycle ends. Theburst refresh clock pulses are combined by the cycle combining circuitto determine a second burst refresh cycle as an exit-burst refreshperiod.

Advantageously, the cycle of the generation of the burst refresh pulsesat each of the entry into and the exit from the self-refresh mode isdetermined based on the number of the wordlines (or rows) of the DRAMcell array. Advantageously, the pulse counter counts the pulses of theburst refresh clock signal up to N which is consistent with the numberof the wordlines. Upon N count, the second self-refresh mode signal isproduced by the pulse counter. The second self-refresh mode signal isused for disabling the self-refresh entry and exit signals.

An embodiment DRAM device includes the circuitry of the designatedaddress detection and the dummy refresh cycle generation for theself-refresh operation mode. In a case where the DRAM cells of the evennumbered wordlines are set to maintain their stored data in theself-refresh operation settings, the self-refresh mode enters with theinitial burst refresh cycle starting at the even numbered wordline.There is, therefore, provided the detection of the starting refreshaddress and the adoption of a dummy refresh cycle in a case where thedetected refresh address does not match with the self-refresh operationsetting, to perform an automatic burst refresh operation at thebeginning of the self-refresh. The detection of the starting refreshaddress is based on a specific bit (e.g., the LSB) of the refresh rowaddress.

In accordance with another aspect of the present invention, there isprovided a method for self-refreshing a DRAM having cells of an array ofrows by columns. Each DRAM cell of the array is coupled with a wordlineof a corresponding row and a bitline of a corresponding column. By themethod, the DRAM cells coupled with wordlines of a first set of everyother rows retain main data stored therein and assistant data, which isopposite data to the main data, is overwritten into the DRAM cellscoupled with wordlines of a second set of every other rows, in aself-refresh mode.

Preferably, an entry into the self-refresh mode to retain the main dataand to overwrite the assistant data is detected and a first self-refreshmode signal is produced. In response to the first self-refresh modesignal, a starting refresh address for operation of the self-refreshmode is detected. If the detected starting refresh address does notmatch with a predetermined address for operation of the self-refreshmode, the established dummy refresh cycle will be established and beadopted for self-refreshing the DRAM cells.

Advantageously, the step of retaining includes rewriting the main datain the DRAM cells coupled with the wordlines of the even numbered rowsand the step of overwriting includes rewriting the assistant data in theDRAM cells coupled with the wordlines of the odd numbered rows.

In accordance with embodiments of the present invention, there areprovided an appropriate and practical design of and an appropriatemethod for self-refresh control to reduce power consumption of DRAMdevices.

Other aspects and features of the present invention will become apparentto those ordinarily skilled in the art upon review of the followingdescription of specific embodiments of the invention in conjunction withthe accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will now be described, by way ofexample only, with reference to the attached Figures, wherein:

FIG. 1 is a block diagram illustrating self-refresh operation withautomatic burst refresh function found in conventional dynamic randomaccess memory (DRAM) devices;

FIG. 2 illustrates a DRAM device with a self-refresh function accordingto an embodiment of the present invention;

FIG. 3 is a block diagram of a DRAM device according to one embodimentof the present invention;

FIG. 4 is a block diagram illustrating an example of a self-refreshentry/exit controller of the DRAM device shown in FIG. 3;

FIG. 5 is a block diagram illustrating an example of a burst clockgenerator of the DRAM device shown in FIG. 3;

FIG. 6 is a block diagram illustrating an example of a dummy refreshproducer of the DRAM device shown in FIG. 3;

FIG. 7 is a timing diagram illustrating relative timing sequence for thesignals of the DRAM device shown in FIG. 3;

FIG. 8 illustrates operation modes in the DRAM device shown in FIG. 3;

FIG. 9 illustrates timing of activating wordlines of even and oddnumbered row addresses;

FIG. 10 is a timing diagram illustrating relative timing sequence forthe signals of the dummy refresh producer shown in FIG. 6;

FIGS. 11A and 11B are flow charts illustrating the operation in theself-refresh mode performed by the DRAM device shown in FIG. 3;

FIG. 12 is a block diagram illustrating another example of the dummyrefresh producer of the DRAM device shown in FIG. 3;

FIG. 13 is a block diagram illustrating an example of a dummy pulsegenerator of the dummy refresh producer shown in FIG. 12;

FIG. 14 is a block diagram illustrating another example of the burstclock generator of the DRAM device shown in FIG. 3; and

FIG. 15 is a block diagram of a DRAM device according to anotherembodiment of the present invention.

DETAILED DESCRIPTION

In the following detailed description of sample embodiments of theinvention, reference is made to the accompanying drawings which form apart hereof, and in which is shown by way of illustration specificsample embodiments in which the present invention may be practiced.These embodiments are described in sufficient detail to enable thoseskilled in the art to practice the present invention, and it is to beunderstood that other embodiments may be utilized and that logical,mechanical, electrical, and other changes may be made without departingfrom the scope of the present invention. The following detaileddescription is, therefore, not to be taken in a limiting sense, and thescope of the present invention is defined by the appended claims.

Generally, the present invention provides the self-refreshing of memorycells within an array included in a dynamic random access memory (DRAM)device.

As previously described, the prior art DRAM device shown in FIG. 1performs the self-refresh operation based on the one-cell-per-bit mannerduring the self-refresh period. Therefore, the self-refresh operationneeds only burst refresh control in response to the entry into and/orthe exit from the self-refresh mode.

If a DRAM device implements the self-refresh function based on atwo-cell-per-bit manner, data of one half of cells (e.g., of the evennumbered wordlines) will be stored as main data and opposite data of theother half of cells (e.g., of the odd numbered wordlines) will be storedas assistant data. However, without circuitry for performing correct rowaddressing, the two-cell-per-bit self-refresh may be performedimproperly.

It is assumed that the DRAM device implements the self-refresh functionbased on the two-cell-per-bit manner and that the even numberedwordlines (WL0, WL2, WL4, . . . ) control the bitline data and the oddnumbered wordlines (WL1, WL3, . . . ) control the complementary bitlinedata. The cell data of the even numbered wordline is preferably retainedin accordance with the two-cell-per-bit self-refresh operation settings.The cells of all odd numbered wordlines preferably store the specificopposite data to those of the corresponding even numbered wordlines. Ina case wherein the DRAM device enters the self-refresh operation mode,only data of one half of the memory cells (e.g., of the even numberedwordlines) is retained and the other half of memory cells (e.g., of theodd numbered wordlines) store the opposite or complementary data.

For example, if a cell of wordline WL0 has data “high”, thecorresponding cell of wordline WL1 should be written with opposite data“low” (i.e., the assistant data). The data of the pair of cellsconnected to wordlines WL0 and WL1 is fed to a bitline sense amplifier.Wordline WL0 is activated and the data stored in the cells thereof isrestored by a refresh command. Then, wordline WL1 is activated, whilewordline WL0 is still active, the complementary bitline data overwritesthe cells of wordline WL1, that is, the opposite data is written intothe cells of wordline WL1. This procedure has to be done for all otherwordlines in the cell array for the two-cell-per-bit manner ofoperation.

The two-cell-per-bit self-refresh operation mode should enter with theinitial burst refresh cycle starting with the even numbered wordline, ifthe even numbered wordlines are set in the address setting as such thatthe main data is maintained in the cells thereof. Similarly, if the oddnumbered wordlines are set in the address setting as such that the maindata is maintained in the cells thereof, the self-refresh operation modeshould enter with the initial burst refresh cycle starting at the oddnumbered wordline. This ensures that the data is retained upon return tothe one-cell-per-bit manner of operation. It, therefore, requiresself-refresh circuitry for performing automatic burst refresh and thedetection of a correct start refresh address.

The embodiments in accordance with the present invention are nowdescribed in the context of a DRAM device, and in particular, a refreshcontroller for self-refreshing DRAM cells within an array.

FIG. 2 shows a DRAM device according to an embodiment of the presentinvention. Referring to FIG. 2, an array 200 of DRAM cells has aplurality of wordlines WL0-WL(N−1) and a plurality of bitlines BL0 andBL0* - - - BLM and BLM*. The array 200 of N rows by (M+1) columnsincludes a plurality of DRAM cells MS (i.e., MS_(0,0) to MS_(N−1,M))that are to be refreshed. Each DRAM cell includes an access transistorand a charge storage capacitor (not shown). A plurality of bitline senseamplifiers SA0-SAM are coupled with the array 200. The bitlines arearranged as folded bitlines (pairs of complementary bitlines) and eachcomplementary bitline pair of BL0, BL0* - - - BLM, BLM* are connected toa corresponding bitline sense amplifier. The bitline sense amplifiersSA0-SAM are connected to databuses (not shown) through a pair ofrespective column access transistors (not shown). The pairs of columnaccess transistors are activated by respective column address signals,when data access to the array 200 is required.

In the array 200 of DRAM cells, the refresh row address signal isrepresented by (n+1) bit signal, RFA(0:n), for example. Each of thememory cells is coupled with associated wordline and one bitline of acomplementary bitline pair. Data can be read through the bitline senseamplifier connected to the respective complementary bitline pair. In aread operation, a wordline is activated and the bit charge is sharedwith the associated bitline. In accordance with the column address, thefull logic level on the bitlines is applied to the databuses. The cellsof the array 200 are refreshed in the self-refresh operation mode. Inthe two-cell-per-bit self-refresh mode, the previously stored data,i.e., main data, in the cells of the even numbered rows are retained andthe assistant data, which is opposite to the main data, overwrites thecells of the odd numbered rows.

The refreshing operation of the DRAM cells of the array 200 is performedby a self-refresh controller 201 and a mode detector 203 that detects anentry into and an exit from the self-refresh mode in response to COMMANDsignal. Based on the detected self-refresh entry and exit, a time periodbetween the self-refresh entry and exit is determined. The self-refreshcontroller 201 receives a starting refresh address Ad_(SRF) included ina row address and compares it to a predetermined address Ad_(PD). If thedetected starting refresh address Ad_(SRF) and the predetermined addressAd_(PD) mismatch with each other, the self-refresh controller 201 willestablish a dummy refresh cycle. The dummy refresh cycle is adoptedduring the time period between the self-refresh entry and exit and thestarting refresh address is changed. Based on the changed startingrefresh address, proper row addresses are provided by an address decoder205 to drive the wordlines. In response to the row addresses, thetwo-cell-per-bit self-refresh operation is performed to refresh the DRAMcells within the array 200.

If the detected starting refresh address Ad_(SRF) matches with thepredetermined address Ad_(PD), the self-refresh controller 201 willprovide no dummy refresh cycle. Thus, without change to the detectedstarting refresh address, the non-changed refresh starting address isprovided by the address decoder 205 to perform the two-cell-per-bitself-refresh of the DRAM cells within the array 200.

FIG. 3 shows a DRAM device according to one embodiment of the presentinvention. An array 210 of DRAM cells included in the DRAM device isassociated with a plurality of wordlines, a plurality of bitlines andincludes a plurality of memory cells. Each memory cell is coupled withassociated wordline and bitline. The array 210 of DRAM cells of N rowsby (M+1) columns and bitline sense amplifiers are arranged as the array200 shown in FIG. 2. The DRAM cells of the array 210 operate with highand low supply voltages VDD and VSS (voltage sources not shown) thatcorrespond to “high” and “low” logic states.

Referring to FIG. 3, an operation of the self-refresh mode, known as a“sleep” mode, is initiated by issuing a self-refresh entry command. Aself-refresh mode detector 211 receives a self-refresh command signal213 provided by a memory controller (not shown) and provides a firstsleep signal “SLEEP1” 215 to a self-refresh entry/exit controller 217, aself-refresh oscillation controller 219 and a dummy refresh producer221. In response to the first sleep signal 215 and a second sleep signal“SLEEP2” 223 from a burst refresh counter 225, the self-refreshoscillation controller 219 provides a self-refresh oscillation enablesignal “SREF_EN” 227 to a self-refresh oscillator 229 which in turnprovides a self-refresh oscillation signal “SREF_OSC” 231 to theself-refresh entry/exit controller 217.

The self-refresh entry/exit controller 217 receives the first sleepsignal 215, the second sleep signal 223, the self-refresh oscillationsignal 231 and a one-bit address signal 233 representing the leastsignificant bit (LSB) “RFA[0]” of a refresh row address signal 235. Therefresh row address signal 235 is provided by an internal row addresscounter 237 and represents (n+1) bit address RFA[0:n]. The self-refreshentry/exit controller 217 provides a self-refresh entry signal “ENTRY”239 and a self-refresh exit signal “EXIT” 241 to a burst clock generator243 which in turn provides a burst refresh clock signal “BREF_CLK” 245to the burst refresh counter 225 and a refresh clock producer 247.

The dummy refresh producer 221 responds to the self-refresh entry signal239, the first sleep signal 215 and the address LSB signal 233 andprovides a dummy refresh signal “DUM_REF” 249 to the refresh clockproducer 247. The refresh clock producer 247 performs control functionsof producing pulses as a refresh clock signal “REF_CLK” 251. In thepresent embodiment, the clock producer 247 effectively functions as anOR circuit to logically combine the burst refresh clock signal 245, thedummy refresh signal 249 and the self-refresh oscillation signal 231, sothat the logically combined refresh clock signal “REF_CLK” 251 isprovided to the internal row address counter 237. The internal rowaddress counter 237 counts the pulses of the refresh clock signal 251 toprovide the refresh row address signal “RFA[0:n]” 235. A row addressdecoder 253 receives the refresh row address signal 235 and the dummyrefresh signal “DUM_REF” 249 and provides a decoded row address signal255 to the array 210 of DRAM cells. In response to the dummy refreshcycle being established or non-established, proper decoding addressesare provided by the row address decoder 253 to activate the selectedwordlines of the cell array arranged as shown in FIG. 2 for the purposeof refreshing the cells. In a case where a dummy refresh pulse in thedummy refresh signal 249 is produced and a dummy cycle is established,the row address decoder 253 ignores the address provided by the internalrow address counter 237 during the established dummy cycle.

The pulses of the burst refresh clock signal 245 generated by the burstclock generator 243 are counted by the burst refresh counter 225. Theburst refresh counter 225 provides the second sleep signal 223 when itscount reaches N.

FIG. 4 shows a detailed circuit of the self-refresh entry/exitcontroller 217 shown in FIG. 3. Referring to FIG. 4, the second sleepsignal 223 is inverted by an inverter 311. The inverted output signalfrom the inverter 311 and the first sleep signal 215 are fed to an ANDgate 313. An output signal of the AND gate 313 and the address LSBsignal “RFA[0]” 233 are fed to an R-S flip-flop type latch circuit 320including cross-coupled NAND gates 321 and 323. An output signal of thelatch circuit 320 (i.e., the NAND gate 321) is inverted by an inverter325 to produce the self-refresh entry signal 239. Also, the first sleepsignal 215 and the second sleep signal 223 are fed to a NAND gate 331.An output signal of the NAND gate 331 and the self-refresh oscillationsignal 231 are fed to another R-S flip-flop type latch circuit 340including cross-coupled NAND gates 341 and 343. An output signal of thelatch circuit 340 (i.e., the NAND gate 341) and the first sleep signal215 are fed to a NOR gate 345. An output signal of the NOR gate 345 andthe second sleep signal 223 are fed to an AND gate 347 which in turnprovides the self-refresh exit signal 241.

FIG. 5 shows a detailed circuit of the burst clock generator 243 shownin FIG. 3. Referring to FIG. 5, the self-refresh entry signal 239 andthe self-refresh exit signal 241 are fed to an OR gate 411 which in turnprovides a pulse control signal 413 to a burst pulse generator 415.During the “high” logic state of the pulse control signal 413, the burstpulse generator 415 generates pulses continuously as the burst refreshclock signal 245, the pulse having a predetermined repetition periodT_(BCL) and pulse width T_(BCLW).

FIG. 6 shows a detailed circuit of the dummy refresh producer 221 shownin FIG. 3. Referring to FIG. 6, the self-refresh entry signal 239 isinverted by an inverter 511. The inverted output signal n1 of theinverter 511 and the address LSB signal “RFA[0]” 233 are fed to a NANDgate 513. An output signal n2 of the NAND gate 513 and the first sleepsignal 215 are fed to an R-S flip-flop type latch circuit 520 includingcross-coupled NAND gates 521 and 523. The latch circuit 520 receives thefirst sleep signal 215 and the NAND output signal n2. The NAND gates 523and 521 provide output signals n3 and n4, respectively. The outputsignal n4 of the NAND gate 521 of the latch circuit 520 is inverted byan inverter 525, the inverted output signal n5 of which is fed to adelay circuit 527 having a delay time T_(D1) and to an AND gate 529. Anoutput signal n6 of the delay circuit 527 is inverted by an inverter531, the inverted output signal n7 of which is fed to the AND gate 529.The AND gate 529 produces the dummy refresh signal 249 that has a pulse,the width of which corresponds to the delay time T_(D1) of the delaycircuit 527.

FIG. 7 shows relative timing sequence for the signals of the DRAM deviceshown in FIG. 3. FIG. 8 shows the operations in the self-refresh mode bythe DRAM device shown in FIG. 3. FIG. 9 shows the activation ofwordlines of even and odd numbered row addresses. FIG. 10 shows relativetiming sequence for the signals of a dummy refresh producer shown inFIG. 6.

Referring to FIGS. 2-10, the operations of the embodiment DRAM devicewill be now described. The array 210 of DRAM cells is operated with thetwo-cell-per-bit addressing manner and the cells can be refreshed in theself-refresh mode. Before the operation mode enters the two-cell-per-bitself-refresh mode, the operation mode is the normal one-cell-per-bitmode. For the DRAM cell array, the starting refresh address at theentry-burst refresh period should match with the selected row addresswhich is either an even or an odd numbered address. The DRAM deviceincludes circuitry for detecting the starting refresh address at theself-refresh entry and for providing addresses in response to thedetected starting refresh address for self-refreshing the DRAM cells.

In the embodiment, signals are active “high” logic. Each signal has“high” and “low” logic states corresponding to the high and low supplyvoltages VDD and VSS, respectively (voltage supply circuitry not shown).At the self-refresh entry (i.e., an entry into the two-cell-per-bitself-refresh mode), in response to the self-refresh command signal 213,the self-refresh mode detector 211 enables the first sleep signal“SLEEP1” 215 (time T0). After the first sleep signal 215 goes “high” inresponse to the self-refresh entry, the self-refresh entry/exitcontroller 217 starts detecting whether or not the logic state of theaddress LSB signal “RFA[0]” 233 is “high”. In the embodiment, only theLSB of the row address, RFA[0], is detected. For the present example,the cells of the even numbered wordlines are to be refreshed in theself-refresh operation. Therefore, the LSB (i.e., RFA[0]) must be at the“low” logic state at the beginning of the self-refresh operation mode,so that the even numbered wordlines are refreshed first in the burstrefresh operation. Thus, in the DRAM cell array, the LSB's logic stateof the row address is detected and it is decided whether the detectedlogic state matches with the predetermined (or set) logic state of thestarting row address.

In a case where the LSB (one-bit “RFA[0]) is “high” when the first sleepsignal 215 goes “high” at time T0, that is, no match between the LSBwith the predetermined logic state “low” (i.e., a “wrong” addressdetected), the dummy refresh producer 221 generates a pulse as the dummyrefresh signal 249. Upon receipt of the pulse of the dummy refreshsignal 249, the refresh clock producer 247 generates a pulse as therefresh clock signal 251 (pulse #0), so as that the internal row addresscounter 237 changes its count. Then, in response to the fallingtransition of pulse #0, the internal row address counter 237 toggles itsappropriate counters therein (not shown), with the result that theaddress LSB signal “RFA[0]” 233 changes its logic state from “high” to“low”. Thus, the one-bit address “RFA[0]” is changed to the logic stateof a “correct” address bit. The dummy pulse, which corresponds to pulse#0, is not fed to the burst refresh counter 225 and thus, it does notcount the dummy pulse.

In order to detect the “RFA[0]” state of the address LSB signal 233, thelatch circuit 520 is used in the dummy refresh producer 221. Before timeT0, as the logic state of the self-refresh entry signal “ENTRY” 239 is“low”, in response to the rising transition of the address LSB signal233, the output signal n2 of the NAND gate 513 of the dummy refreshproducer 221 goes “low” and the output signal n3 of the NAND gate 523 ofthe latch circuit 520 goes “high”. In response to the rising transitionof the first sleep signal 215, the NAND output signal n4 of the latchcircuit 520 goes “low”, with the result that the inverted output signaln5 of the inverter 525 goes “high”. As such, upon detection of the bitof “RFA[0]” being logic “high” when the first sleep signal 215 goes“high”, the generation of the pulse of the dummy refresh signal 249 isinitiated. The delay circuit 527 and the inverter 531 are used forgeneration of a pulse signal having a self-timed width TD1. Thegeneration of the pulse of the dummy refresh signal 249 establishes adummy refresh cycle.

As described above, at the self-refresh entry, the first sleep signal“SLEEP1” 215 goes “high” (time T0). As shown in FIG. 7, the logic stateof the address LSB signal “RFA[0]” 233 is “high” at time T0. The fallingtransition of the first sleep signal 215 does not cause the “high” logicstate of the output of the latch circuit 320 to change. Thus, theself-refresh entry “ENTRY” 239 maintains the “low” logic state. Once theaddress LSB signal “RFA[0]” 233 changes its logic state from “high” to“low”, the output of the NAND gate 321 of the latch circuit 320 goes“low”, with the result that the self-refresh entry/exit controller 217enables the self-refresh entry signal 239 to transition from the “low”logic state to the “high” logic state. Then, the burst clock generator243 that includes the burst pulse generator 415 therein starts tooperate. The burst clock generator 243 commences the generation of theburst refresh clock signal 245 having continuous narrow clock pulsesthat are provided to the refresh clock producer 247 and the burstrefresh counter 225. The refresh clock producer 247 produces the refreshclock signal 251. In response to the falling transitions of the refreshclock signal 251, the internal row address counter 237 toggles theaddress LSB signal 233. Hence, in a case of the “high” logic state ofthe address LSB signal “RFA[0]” 233 at the self-refresh entry, theenabling of the self-refresh entry signal “ENTRY” 239 and the generationof the burst refresh clock pulses of the burst refresh clock signal“BREF_CLK” 245 are delayed until the expiration of the established dummyrefresh cycle.

The burst refresh counter 225 counts the pulses (which correspond topulses #1, #2, - - - ) of the burst refresh clock signal 245. When thecount reaches N, it produces the second sleep signal 223. The secondsleep signal 223 is enabled and transitions from the “low” to “high”logic state at time T1. Wherein, N is the number of the wordlines of thearray 210 of DRAM cells. The rising transition of the second sleepsignal 223 disables the self-refresh entry signal 239, so that the burstclock generator 243 ceases the generation of the burst refresh clocksignal 245. Thus, the generation of pulses of the refresh clock signal251 is ceased at time T1. The generation and ceasing of pulses of theburst refresh clock signal 245 establish a burst refresh cycle. Thefirst burst operation from time T0 to time T1 (i.e., a combination ofthe dummy refresh cycle and the burst refresh cycle) is called an“entry-burst refresh period”. The row address decoder 253 receives therefresh row address signal 235 that corresponds to pulses #0-#N of therefresh clock signal “REF_CLK” 251. In response to the dummy refreshsignal 249, during the established dummy refresh cycle, the row addressdecoder 253 disregards the refresh row address derived from pulse #0 anddecodes the self decoded row addresses derived from pulses #1-#N of therefresh clock signal 251 to provide the decoded row address signal 255.The decoded row address signal 255 is used for selecting one or morewordlines of the array 210 of DRAM cells. The cells of the selectedwordlines are refreshed. However, the settings for the DRAM cell arrayin the embodiment DRAM device are such that the cells of the evennumbered wordlines, as the main behaving cells, are to be refreshed andthe data is retained therein.

During the entry-burst refresh period, the even numbered wordline WLEV(e.g., wordline WL0) is activated and the cells (MS_(0,0) to MS_(0,M))connected thereto are refreshed, so that the cells are restored by thepreviously stored data bit. While the activated even numbered wordlineWLEV is still active, its adjacent and odd numbered wordline WLOD (e.g.,wordline WL1) is activated (see FIG. 9) and the cells (MS_(1,0) toMS_(1,M)) connected thereto are overwritten by the opposite data bit tothat of the even numbered cells.

When the second sleep signal 223 goes “high”, its rising transition fromthe “low” to “high” logic state activates the self-refresh oscillationcontroller 219. The self-refresh oscillation enable signal 227 isenabled and transitions from the “low” logic state to the “high” logicstate. Also, the self-refresh entry signal “ENTRY” 239 is disabled. Inresponse to the rising transition of the self-refresh oscillation enablesignal 227, the self-refresh oscillator 229 commences the generation ofthe self-refresh oscillation signal 231 having continuous pulses. Thepulse repetition period T_(OSC) and the pulse width T_(OSCW) of theself-refresh oscillation signal 231 are predetermined. The pulserepetition period T_(OSC) of the self-refresh oscillation signal 231 isselected to be much longer than that of the burst refresh clock signal245. After time T1, the DRAM cell array is in a real “self-refresh” modeor so called as “sleep” mode for a certain period of time (“self-refreshperiod”) to reduce power consumption until the “self-refresh exit”command is given by the memory controller at time T2 (i.e., an exit fromthe self-refresh operation mode).

If the logic state of the address LSB signal “RFA[0]” 233 is “low” whenthe first sleep signal “SLEEP1” 215 transitions from the “low” to the“high” logic state at time T0, that is, the detected LSB of the refreshrow address matches with the predetermined logic state of “low”, thedetected starting address will be “correct”. In the situation of thecorrect address detection, as the output signal n3 of the NAND gates 523of the latch circuit 520 is “low”, despite the rising transition of thefirst sleep signal 215, the output signal n4 of the NAND gate 521maintains its “low” logic state. No pulse is produced as the dummyrefresh signal 249 and thus, no dummy refresh cycle is established.

In response to the “self-refresh exit” command by the self-refreshcommand signal 213, the self-refresh mode detector 211 disables thefirst sleep signal 215 and thus, the first sleep signal 215 transitionsfrom the “high” to “low” logic state (time T2). The falling transitionof the first sleep signal 215 causes the output signal n4 of the NANDgate 521 to transition from the “low” to “high” logic state. Theinverted output signal n5 of the inverter 525 transitions from the“high” to “low” logic state and thus, no pulse of the dummy refreshsignal 249 is produced. No dummy refresh cycle is established at theexit from the self-refresh mode.

In response to the falling transition of the first sleep signal 215, theself-refresh oscillation controller 219 disables the self-refreshoscillation enable signal 227 and it transitions from the “high” to“low” logic state. Therefore, the self-refresh oscillator 229 ceases thegeneration of pulses of the self-refresh oscillation signal 231. Thegeneration and ceasing of pulses of the self-refresh oscillation signal231 establishes a self-refresh cycle or a self-refresh period. In thisself-refresh period, the decoded row address signal 255 represents rowaddresses for selecting wordlines of the array 210, as described above.

As described above, during the entry-burst refresh period, the cellsconnected to the even numbered wordlines are refreshed and retain themain data. The cells connected to the odd numbered wordlines areoverwritten by the opposite data. Therefore, two cells (e.g., cellsMS_(0,0) and MS_(1,0)) connected to a pair of even and odd numberedwordlines (e.g., WL0 and WL1) store one bit of data with a large voltagedifference by the two differential voltage levels therebetween. Duringthe self-refresh period, the main and assistant data forming the one bitdata stored in the two individual cells of a pair of wordlines is sensedand restored so as to refresh the data. In order to perform the functionof the two-cell-per-bit self-refresh, the pair of even and odd numberedwordlines is simultaneously activated as shown in FIG. 9. As thedifferential voltage levels represent the one bit data, the dataretention time of two-cells can be longer than that of a single cell andthus, the refresh cycle of the two-cell-per-bit operation can be muchless than that of the one-cell-per-bit operation. In the DRAM deviceaccording to the embodiment, therefore, the self-refresh is achievedwith a longer self-refresh cycle, P_(SRF), resulting in less powerconsumption. The simultaneous activation of a pair of wordlines isachieved by dual-row addressing performed by the row address decoder253. The dual-row addressing is known technique and disclosed in U.S.Pat. No. 5,903,511 granted to Gillingham on May 11, 1999, which isincorporated herein by reference.

As seen in FIG. 7, it may happen that the last pulse of the self-refreshoscillation signal 231 is still active (i.e., the “high” logic state)when the first sleep signal 215 transitions from the “high” to “low”logic state at time T2. The falling transition of the first sleep signal215 disables the self-refresh oscillation enable signal 227 and it maycause premature ceasing of the self-refresh oscillation signal 231.Therefore, with such a short period of time, the self-refresh oscillator229 may be forced to cease the generation of the pulse. However, theshort period of time may be insufficient for activating the wordline toproperly restore the cell data. To prevent such a problem, theself-refresh oscillator 229 includes a protection circuit (not shown).By the protection circuit, once the self-refresh oscillator 229generates a pulse, it can complete the generation of one pulse of thewidth T_(OSCW), regardless of the state of the self-refresh oscillationenable signal 227. Also, the self-refresh entry/exit controller 217detects the state of the self-refresh oscillation signal 231 by thelatch circuit 340 thereof, to delay the generation of the self-refreshexit signal 241 until the “high” logic state of the self-refreshoscillation signal 231 ends (i.e., the transition from the “high” to“low” logic state). Then, the self-refresh exit signal 241 transitionsfrom the “low” to “high” logic state and its rising transition initiatesanother burst refresh clock generation by the burst clock generator 243.Thereafter, operations similar to those of the “entry-burst refreshperiod” are repeated.

At the self-refresh exit, no pulse is produced for the dummy refreshsignal 249 by the dummy refresh producer 221. In response to the risingtransition of the self-refresh exit signal 241, the burst clockgenerator 243 generates pulses of the burst refresh clock signal 245that are provided to the refresh clock producer 247. Also, the pulses(which correspond to pulses #1, #2, - - - ) are counted by the burstrefresh counter 225. When the count reaches N, the burst refresh counter225 disables the second sleep signal 223 to transition from the “high”to the “low” logic state. In response to the falling transition of thesecond sleep signal 223, the self-refresh exit signal 241 goes “low” attime T3. With the falling transition of the self-refresh exit signal241, the pulse control signal 413 from the OR gate 411 of the burstclock producer 243 goes “low”, with the result that burst pulsegenerator 415 ceases the generation of pulses of the burst refresh clocksignal 245. Therefore, the refresh clock producer 247 ceases thegeneration of pulses of the refresh clock signal 251. The generation andceasing of pulses of the burst refresh clock signal 245 establishanother burst refresh cycle. This burst operation can be called an“exit-burst refresh period”.

At time T2, the two-cell-per-bit row addressing operation is over andthe operation mode returns to the sequential-row addressing operationmode. Thus, the operation of the “exit-burst refresh period” is based onthe one-cell-per-bit operation and it is not necessary to start witheven numbered wordlines. During the “exit-burst refresh period”, theoperation mode is prepared for the following normal mode to performone-cell-per-bit write/read/refresh operations.

As described above, the latch circuit 320 of the self-refresh entry/exitcontroller 217 detects the address LSB signal “RFA[0]” 233 for theentry-burst refresh operation. Also, the latch circuit 340 is used fordetection of the state of the self-refresh oscillation signal 231 toinitiate the self-refresh exit signal 241 at the end of the self-refreshoperation (or the self-refresh exit). In response to the fallingtransition of the first sleep signal “SLEEP1” 215 (time T2), the outputsignal of the NAND gate 331 goes “high”. However, during theself-refresh oscillation signal “SREF_OSC” 231 is the “high” logicstate, the rising transition of the output signal of the NAND gate 331does not cause the NAND gate 341 of the latch circuit 340 change itslogic state from the “high” to “low”. When the self-refresh oscillationsignal “SREF_OSC” 231 goes “low” (after time T2), the output of the NANDgate 343 of goes “high”, with the result that output signal of the NANDgate 341 of the latch circuit 340 goes “low”. Therefore, the outputsignal of the OR gate 345 goes “low”, with the result that theself-refresh exit signal “EXIT” 241 goes “high”. The “high” logic stateof the self-refresh exit signal “EXIT” 241 is maintained until the burstrefresh counter 225 counts N and the second sleep signal 223 is disabled(time T3).

FIGS. 11A and 11B show the operations in the self-refresh mode by theDRAM device shown in FIG. 3. Referring to FIGS. 2-10, 11A and 11B, uponstart of the control operation in the DRAM device, when the self-refreshmode detector 211 detects the entry into the self-refresh mode (step711), the first sleep signal “SLEEP1” 215 is provided (i.e., enabled)(at time T0). In response to the first sleep signal “SLEEP1” 215, theoperation mode is set to the row addressing mode. Before theself-refresh entry, the DRAM operates in the normal mode and theoperation mode is the sequential-row addressing operation mode. Also, inresponse to the first sleep signal “SLEEP1” 215, the self-refreshentry/exit controller 217 starts the detection of the address for theentry-burst refresh operation. The self-refresh entry/exit controller217 receives the row address signal and detects the address LSB signal“RFA[0]” 233 (step 712).

Then, the self-refresh entry/exit controller 217 determines whether thedetected address matches with the predetermined address (step 713). In acase of no match (NO at step 713), then the dummy refresh producer 221produces a dummy pulse (step 714) as the dummy refresh signal “DUM_REF”249 and therefore, a dummy refresh cycle is established. In response tothe dummy pulse, the refresh clock producer 247 provides pulse #0, whichcorresponds to the dummy pulse, to the internal row address counter 237.The internal row address counter 237 toggles to increment the rowaddress (step 715). Where the detected address matches with thepredetermined address (YES at step 713) or after the increment of therow address at step 715, the burst clock generator 243 generates a pulseas the burst refresh clock signal “BREF_CLK” 245. It is noted that byestablishing the dummy refresh cycle (step 714), the generation of burstrefresh clock pulses is delayed. Thereafter, the burst refresh counter225 determines whether the count by the burst refresh counter 225reaches N (step 717). In a case where the count is not N (NO at step717), the generation of burst refresh clock pulses continues (step 716).Once the count reaches N (YES at step 717), the entry-burst refreshperiod is over (time T1) and the operation moves to the self-refreshperiod (step 718). However, the row addressing operation continues.

In the row addressing operation during the entry-burst refresh period,at step 716, the even numbered wordline WLEV (e.g., wordline WL0) isactivated and the cells (MS_(0,0) to MS_(0,M)) connected thereto arerefreshed, so that the cells are restored by the previously stored data(i.e., the main data). While the activated even numbered wordline WLEVis still active, its adjacent (odd numbered) wordline WLOD (e.g.,wordline WL1) is activated and the cells (MS_(1,0) to MS_(1,M))connected thereto are written by the opposite data (i.e., the assistantdata) to that of the even numbered wordline.

Then, the self-refresh oscillator 229 generates a pulse as theself-refresh oscillation signal “SREF_OSC” 231 (step 719). Thereafter,the self-refresh entry/exit controller 217 determines whether the exitfrom the self-refresh mode is detected (step 720). In a case of nodetection of the self-refresh exit (NO at step 720), the generation ofpulses of the self-refresh oscillation signal “SREF_OSC” 231 continues(step 719). Once the self-refresh exit is detected (YES at step 720),the first sleep signal “SLEEP1” 215 is disabled and the generation ofpulses of the self-refresh oscillation is ceased (time T2). In responseto the disabling of the first sleep signal 215, the operation mode isset to the sequential-row addressing operation mode. The self-refreshperiod is over and the operation moves to the exit-burst refresh period(step 721).

In the row addressing operation during the self-refresh period, at step719, the even numbered wordline WLEV (e.g., wordline WL0) and theadjacent odd numbered wordline WLOD (e.g., wordline WL1) aresimultaneously activated. Two cells (e.g., MS_(0,0) and MS_(1,0);MS_(0,1) and MS_(1,1); - - - , MS_(0,M) and MS_(1,M)) between the twoactivated wordlines are refreshed by the previously stored main andassistant data that represent differential one bit data.

When the self-refresh period is over, the self-refresh entry/exitcontroller 217 determines whether the last pulse of the self-refreshoscillation signal “SREF_OSC” 231 is still active (i.e., the “high”logic state) (step 722). If active (YES), then the generation of theself-refresh exit signal “EXIT” 241 will be delayed until theself-refresh oscillation signal is disabled (step 723). After theself-refresh oscillation signal is non-active (NO at step 722 or step723), the burst clock generator 243 generates a pulse as the burstrefresh clock signal “BREF_CLK” 245 (step 724). Then, the burst refreshcounter 225 determines whether the count by the burst refresh counter225 reaches N (step 725). In a case where the count is not N (NO at step725), the generation of burst refresh clock pulses continues (step 724).Once the count reaches N (YES at step 725), the exit-burst refreshperiod is over (time T3).

In accordance with embodiments of the present invention implementing thetwo-cell-per-bit self-refresh operation, the power consumption of DRAMdevices is reduced in the self-refresh operation mode. The data mappingin the embodiment DRAM device is, for example, that higher priority orimportant data is stored in the cells of the even numbered wordlines andlower priority or less important data is stored in the cells of the oddnumbered wordlines. In the DRAM device for providing row addresses forself-refreshing DRAM according to the embodiment of the presentinvention, the correct initial set-up for the two-cell-per-bitself-refresh operation mode in the DRAM cell array is ensured. Thedevice is able to detect the wrong start refresh address and provide thedummy refresh command to increment the internal row address counter.

FIG. 12 shows another example of the dummy refresh producer 221 shown inFIG. 3. Referring to FIG. 12, the address LSB signal “RFA[0]” 233, thefirst sleep signal “SLEEP1” 215 and the self-refresh entry signal 239are fed to the D input terminal, the clock input terminal CLK and theclear input terminal CLR, respectively, of a D-type flip-flop 811. Theoutput signal 813 of the Q output terminal of the flip-flop 811 is fedto a dummy pulse generator 820 which in turn produces pulses of thedummy refresh signal 249.

Referring to FIGS. 6 and 12, when the logic state of the address LSBsignal “RFA[0]” 233 is “high”, at the rising transition of the firstsleep signal 215 as shown in FIG. 8, the Q output signal 813 of the Dflip-flop 815 goes “high”. In response to the rising transition of the Qoutput signal 817, the dummy pulse generator 820 generates a pulsehaving a predetermined width (e.g., width TD1) as the dummy refreshsignal 249. Thereafter, in response to the falling transition of theself-refresh entry signal 239, the D flip-flop is reset. The dummy pulsegenerator 820 may be formed by a delay element and a logic gate as shownin FIG. 6.

FIG. 13 shows an example of the dummy pulse generator 820 shown in FIG.12. Referring to FIG. 12 and 13, the dummy pulse generator 820 is formedby a delay circuit 831, an inverter 833 and an AND gate 835. The outputsignal 817 from the D flip-flop 811 is fed to the AND gate 835 and thedelay circuit 831. The delay circuit 831 delays the output signal 813 bya predetermined time (e.g., T_(D1)) and the delayed signal is invertedby the inverter 833. The inverted signal is fed to the AND gate 835. TheAND gate 835 provides a pulse having a predetermined width (e.g., widthT_(D1)) as the dummy refresh signal 249.

In the embodiment DRAM device shown in FIG. 3, the burst clock generator243 generates pulses of the burst refresh clock signal 245 upon receiptof the self-refresh entry signal 239 or the self-refresh exit signal241. Instead of the internal burst clock generator, external clockpulses can be used as shown in FIG. 14. Referring to FIG. 14, anexternal clock signal 841 having continuous pulses from a clock source(not shown) is fed to one input terminal of an AND gate 843. Theself-refresh entry signal 239 and the self-refresh exit signal 241 arefed to an OR gate 845 which in turn and provides its OR logic outputsignal 847 to another input terminal of the AND gate 843. The pulses ofthe external clock signal 841 are gated by the logic output signal 847,so that the gated clock pulses are provided as the burst refresh clocksignal 245 during the “high” logic state of the self-refresh entrysignal 239 or the self-refresh exit signal 241 (see FIG. 7).

FIG. 15 shows a DRAM device according to another embodiment of thepresent invention. The embodiment DRAM device shown in FIG. 15 issimilar to that of FIG. 3. In the DRAM device shown in FIG. 15, an array910 of DRAM cells to be self-refreshed is arranged as the array 200shown in FIG. 2. The row addressing for the self-refresh is performed toselect from the highest row of wordline WL(N−1) to the lowest row ofwordline WL0. Therefore, the row address to be detected for thetwo-cell-per-bit self-refresh is the most significant bit (MSB) “RFA[n]”of the refresh row address according to the DRAM array configuration.Referring to FIG. 15, a self-refresh entry/exit controller 917 and adummy refresh producer 921 receive a one-bit address signal 933representing one bit “RFA[n]” of a refresh row address signal 935provided by an internal row address counter 937. The RFA[n] is providedto an R-S flip-flop type latch circuit included in the self-refreshentry/exit controller 917 and a NAND gate included in the dummy refreshproducer 921. The circuitry of the self-refresh entry/exit controller917 including the R-S flip-flop type latch is the same as that of theself-refresh entry/exit controller 217 as shown in FIG. 4. Similarly,the dummy refresh producer 921 including the NAND gate is the same asthat of the dummy refresh producer 221 as shown in FIG. 6. Thus, theoperation of detecting the starting address (the MSB) of the refresh rowaddress is similar to the operation based on the LSB of the refresh rowaddress as described above.

Furthermore, the embodiment DRAM device shown in FIG. 15 is differentfrom that of FIG. 3. In the embodiment shown in FIG. 15, a refresh clocksignal “REF_CLK” 951 from a refresh clock producer 947 is provided to arow address decoder 953 as well as an internal row address counter 937.The row address decoder 953 adjusts timing delays of signals andprovides a decoded row address signal 955 to refresh the cells of theselected wordlines in the array 910 of DRAM cells.

The embodiments described above may have further various variations. Inthe above described embodiments, the signals are active “high” logicsignals. The signals may, however, be active “low” logic signals,according to design preferences. The logic “high” and “low” states ofthe signals may be represented by the low and high supply voltages VSSand VDD, respectively. The pulse repetition period T_(BCL) and pulsewidth T_(BCLW) of the burst refresh clock signal 245 produced by theburst clock generator 243 are adjustable in accordance with thecharacteristics of the DRAM cell restore level. The pulse repetitionperiod T_(BCL) and the pulse width T_(BCLW) may be dynamically varied.Similarly, the pulse repetition period T_(OSC) and the pulse widthT_(OSCW) of the self-refresh oscillation signal 231 are adjustable. Thepulse repetition period T_(OSC) and the pulse width T_(OSCW) may bedynamically varied. Also, the delay time T_(D1) of the delay circuit 527may be adjustable. The DRAM cell array may be set such as that the oddnumbered wordlines are refreshed first in the self-refresh operationmode. In such a case, the LSB of the refresh row address RFA[0] shouldbe the “high” logic state at the start of self-refresh and the detectionof the wrong address should be modified accordingly. Similarly, the MSBof the refresh row address can be used for row addressing from thehighest to lowest rows and in such a case, the modification of wrongaddress detection should be made, accordingly.

The DRAM device for providing row addresses and a DRAM array can beconfigured in a single device as a DRAM device. Also, the DRAM deviceand an array of DRAM cells which are self-refreshed by the addressesprovided thereby may be configured in separate devices.

In the embodiments, the device elements and circuits are connected toeach other as shown in the figures, for the sake of simplicity. Inpractical applications of the present invention to semiconductor ICs andDRAM devices, devices, elements, circuits, etc. may be connecteddirectly to each other. As well, devices, elements, circuits etc. may beconnected indirectly to each other through other devices, elements,circuits, etc., necessary for operation of the semiconductor ICs andDRAM devices. Thus, in actual configuration of semiconductor ICs andDRAM devices, the circuit elements and devices are coupled with(directly or indirectly connected to) each other.

The above-described embodiments of the present invention are intended tobe examples only. Alterations, modifications and variations may beeffected to the particular embodiments by those of skill in the artwithout departing from the scope of the invention, which is definedsolely by the claims appended hereto.

1. A dynamic random access memory (DRAM) device comprising: an array ofDRAM cells arranged in rows by columns, each DRAM cell of the arraybeing coupled to a wordline of a corresponding row and a bitline of acorresponding column; and refresh circuitry for refreshing data storedin the DRAM cells coupled to wordlines of a first set of rows as maindata and for overwriting assistant data into the DRAM cells coupled towordlines of a second set of rows in a self-refresh mode, the assistantdata being opposite data to the main data and each row of the second setbeing adjacent to each row of the first set, the refresh circuitryincluding a mode entry detector for detecting an entry into theself-refresh mode to retain the main data and to overwrite the assistantdata, the mode entry detector producing a first self-refresh mode signalwhen entry into the self-refresh mode is detected, a refresh producerfor detecting a starting refresh address provided by an address counterfor operation of the self-refresh mode in response to the firstself-refresh mode signal, the refresh producer changing the addresscounter when the detected starting refresh address mismatches apredetermined address.
 2. The DRAM device of claim 1, wherein therefresh circuitry further comprises: an entry signal producer forproducing a self-refresh entry signal in response to the firstself-refresh mode signal; and adoption circuitry for adopting the dummyrefresh cycle in the self-refresh mode.
 3. The DRAM device of claim 2,wherein: the adoption circuitry comprises a burst circuit fordetermining a first burst refresh cycle in response to the self-refreshentry signal; and the refresh producer comprises a dummy circuit fordetermining a dummy refresh cycle in response to the first self-refreshmode signal and a row address signal, the dummy refresh cycle beingexecuted when the starting refresh address mismatches the predeterminedaddress.
 4. The DRAM device of claim 3, wherein the adoption circuitryfurther comprises entry burst establishing circuitry for combining thedummy refresh cycle with the first burst refresh cycle to establish anentry-burst refresh period; and the burst circuit comprises a refreshburst generator for generating a first burst clock pulse signal duringthe first burst refresh cycle; and burst period decision circuitry forcounting the burst clock pulses up to a predetermined value thatcorresponds to the number of the wordlines to produce a secondself-refresh mode signal, the second self-refresh mode signal causingthe self-refresh entry signal to be disabled and the first burst refreshcycle to be ceased.
 5. The DRAM device of claim 4, wherein: the refreshcircuitry further comprises an oscillator for establishing aself-refresh cycle in response to the second self-refresh mode signal;and the adoption circuitry further comprises a combiner for combiningthe self-refresh cycle with the entry-burst refresh period.
 6. The DRAMdevice of claim 3, wherein the dummy circuit comprises: a pulsegenerator for generating a dummy pulse signal having a predeterminedpulse width driven by the first self-refresh mode signal.
 7. The DRAMdevice of claim 5, wherein the refresh circuitry further comprises: amode exit detector for detecting an exit from the self-refresh mode todisable the first self-refresh mode signal; and an exit signal producerfor producing a self-refresh exit signal in response to the firstself-refresh mode signal being disabled.
 8. The DRAM device of claim 7,wherein: the burst circuit further initiates a second burst refreshcycle in response to the self-refresh exit signal; and the combinerfurther combines the second burst refresh cycle with the self-refreshcycle with the entry-burst refresh period.
 9. The DRAM device of claim8, wherein the refresh burst generator further generates a second burstclock signal during the second burst refresh cycle.
 10. The DRAM deviceof claim 9, wherein the adoption circuitry further comprises: a signalcombiner for combining the dummy pulse signal, the first burst clockpulse signal, the oscillation pulse signal and the second burst clocksignal to produce the refresh clock pulse signal for self-refreshing thecells.
 11. The DRAM device of claim 10, wherein: the refresh burstgenerator comprises a pulse generator for generating pulses as thesecond burst clock pulse signal in response to the exit from theself-refresh mode; and the burst period decision circuitry comprises apulse counter for counting the pulses of the burst clock pulse signal upto a predetermined value that corresponds to the number of the wordlinesof the DRAM device, thereby producing the second self-refresh modesignal upon count of the predetermined value.
 12. The DRAM device ofclaim 11, wherein the oscillator further comprises: an oscillationcontroller for controlling the generation of the oscillation pulsesignal by the self-refresh oscillator in response to the first andsecond self-refresh mode signal.
 13. The DRAM device of claim 12,wherein: the entry signal producer comprises first latch circuitry forholding the self-refresh entry signal when the generation of the firstself-refresh mode signal and a given logic state of the row addresssignal overlap; and the exit signal producer comprises second latchcircuitry for holding the self-refresh exit signal when the ceasing ofthe first self-refresh mode signal and the given logic state of the rowaddress signal overlap.
 14. The DRAM device of claim 13, wherein thedummy circuit comprises: third latch circuitry for disabling thegeneration of the dummy pulse signal when the row address signal matchesthe predetermined address.
 15. The DRAM device of claim 1, wherein therefresh producer comprises: a detector for detecting the startingrefresh address based on one bit of the refresh row address representedby the refresh signal.
 16. The DRAM device of claim 15, wherein thedetector comprises: one-bit detection circuitry for detecting a firstaddress bit of the refresh signal for addressing a first row of thearray.
 17. A method for self-refreshing a dynamic random access memory(DRAM) having cells arranged in rows and columns, each DRAM cell of thearray being coupled to a wordline of a corresponding row and a bitlineof a corresponding column, the method comprising: detecting an entryinto a self-refresh mode for producing a first self-refresh mode signal;detecting a starting refresh address provided by an address counter foroperation of the self-refresh mode in response to the first self-refreshmode signal; changing the address counter when the detected startingrefresh address mismatches a predetermined address; retaining datastored in the DRAM cells coupled to wordlines of a first set of rows, asmain data when the detected starting refresh address matches thepredetermined address; and overwriting assistant data into the DRAMcells coupled to wordlines of a second set of rows, the assistant databeing opposite data to the main data, each row of the second set beingadjacent to each row of the first set.
 18. The method of claim 17,wherein: the step of retaining comprises rewriting the main data in theDRAM cells coupled to the word lines of even numbered rows; and the stepof overwriting comprises rewriting the assistant data in the DRAM cellscoupled to the wordlines of odd numbered rows.
 19. The DRAM device ofclaim 1, wherein changing the address counter includes incrementing theaddress counter when the detected starting refresh address mismatchesthe predetermined address.
 20. The DRAM device of claim 1, whereinchanging the address counter includes toggling the address counter whenthe detected starting refresh address mismatches the predeterminedaddress.
 21. The method of claim 17, wherein changing the addresscounter includes incrementing the address counter when the detectedstarting refresh address mismatches the predetermined address.
 22. Themethod of claim 17, wherein changing the address counter includestoggling the address counter when the detected starting refresh addressmismatches the predetermined address.